Annealing behavior of InAs/GaAs quantum dot structures

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	Annealing behavior of InAs/GaAs quantum dot structures
	Wang ZM ; Feng SL ; Lu ZD ; Zhao Q ; Yang XP ; Chen ZG ; Xu ZY ; Zheng HZ
刊名	journal of electronic materials
	1998
卷号	27 期号:2 页码:59-61
关键词	annealing InAs/GaAs quantum dots BOX ISLANDS GAAS INTERDIFFUSION GAAS(100) GROWTH THRESHOLD INGAAS STRAIN SCALE OPTICAL-PROPERTIES
ISSN号	0361-5235
通讯作者	wang zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	we investigate the annealing behavior of inas layers with different thicknesses in a gaas matrix. the diffusion enhancement by strain, which is well established in strained quantum wells, occurs in inas/gaas quantum dots (qds). a shift of the qd luminescence peak toward higher energies results from this enhanced diffusion. in the case of structures where a significant portion of the strain is relaxed by dislocations, the interdiffusion becomes negligible, and there is a propensity to generate additional dislocations. this results in a decrease of the qd luminescence intensity, and the qd peak energy is weakly affected.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13280]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang ZM,Feng SL,Lu ZD,et al. Annealing behavior of InAs/GaAs quantum dot structures[J]. journal of electronic materials,1998,27(2):59-61.
APA	Wang ZM.,Feng SL.,Lu ZD.,Zhao Q.,Yang XP.,...&Zheng HZ.(1998).Annealing behavior of InAs/GaAs quantum dot structures.journal of electronic materials,27(2),59-61.
MLA	Wang ZM,et al."Annealing behavior of InAs/GaAs quantum dot structures".journal of electronic materials 27.2(1998):59-61.