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An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
conference on semiconductor lasers and applications iii, beijing, peoples r china, nov 12-13, 2007
Ma, XY; Zhong, L
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Enhanced performance of p-GaN by Mg delta doping 期刊论文
journal of crystal growth, 2007, 卷号: 304, 期号: 1, 页码: 7-10
Wang HB (Wang Huaibing); Liu JP (Liu Jianping); Niu NH (Niu Nanhui); Shen GD (Shen Guangdi); Zhang SM (Zhang Shuming)
收藏  |  浏览/下载：55/0  |  提交时间：2010/03/29
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.); Wang, JF (Wang, J. F.); Zhu, JJ (Zhu, J. J.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, H.)
收藏  |  浏览/下载：54/0  |  提交时间：2010/03/29
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Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1894-1899
作者:  Chen Shaowu
收藏  |  浏览/下载：20/0  |  提交时间：2010/11/23
The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文
materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696
Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：106/0  |  提交时间：2010/04/11
A DOUBLE-QUANTUM-WELL IN A DRIVING LASER FIELD 期刊论文
zeitschrift fur physik b-condensed matter, 1995, 卷号: 98, 期号: 4, 页码: 503-507
ZHAO XG; XU SJ; CHENG WC
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/17

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