Advances in high power semiconductor diode lasers - art. no. 682402

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	Advances in high power semiconductor diode lasers - art. no. 682402
	Ma, XY ; Zhong, L
	2008
会议名称	conference on semiconductor lasers and applications iii
会议日期	nov 12-13, 2007
会议地点	beijing, peoples r china
关键词	laser diodes laser bar stacks high power power conversion efficiency reliability packaging
页码	6824: 82402-82402
通讯作者	ma, xy, chinese acad sci, inst semicond, natl engn res ctr optoelect devices, pob 912, beijing 100083, peoples r china.
中文摘要	high power semiconductor lasers have broad applications in the fields of military and industry. recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. the packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. the packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. the status of packaging techniques is stressed. there are basically three different diode package architectural options according to the integration grade. since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. the benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. modularity of package for special application requirements is an important developing tendency for high power diode lasers.
英文摘要	high power semiconductor lasers have broad applications in the fields of military and industry. recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. the latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. the packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. the packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. the status of packaging techniques is stressed. there are basically three different diode package architectural options according to the integration grade. since the package design is dominated by the cooling aspect,. different effective cooling techniques are promoted by different package architectures and specific demands. the benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. modularity of package for special application requirements is an important developing tendency for high power diode lasers.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:58z (gmt). no. of bitstreams: 1 706.pdf: 687404 bytes, checksum: ce7bc8d20c5efeaae45a1fd6e39ad3e2 (md5) previous issue date: 2008; spie.; chinese opt soc.; [ma, xiaoyu; zhong, li] chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; chinese opt soc.
会议录	semiconductor lasers and applications iii
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	978-0-8194-6999-1
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7850]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma, XY,Zhong, L. Advances in high power semiconductor diode lasers - art. no. 682402[C]. 见:conference on semiconductor lasers and applications iii. beijing, peoples r china. nov 12-13, 2007.