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Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载:72/4  |  提交时间:2011/07/05
High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability 会议论文
conference on semiconductor lasers and applications iv, beijing, peoples r china, oct 18-19, 2010
Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Chen LH (Chen Liang-Hui)
收藏  |  浏览/下载:53/4  |  提交时间:2011/07/14
Advances in high power semiconductor diode lasers - art. no. 682402 会议论文
conference on semiconductor lasers and applications iii, beijing, peoples r china, nov 12-13, 2007
Ma, XY; Zhong, L
收藏  |  浏览/下载:35/0  |  提交时间:2010/03/09
Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500℃ 期刊论文
功能材料与器件学报, 2006, 卷号: 12, 期号: 1, 页码: 5-9
作者:  ZHAO Lei;  Zuo Yuhua;  Cheng Buwen
收藏  |  浏览/下载:15/0  |  提交时间:2010/11/23
Thermally Stable Guest-Host Polyetherketone Poled Polymer for Electro-Optical Applications 期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 8, 页码: 1125-1127
Pan Qiwei; Fang Changshui; Qin Zhihui; Gu Qingtian; Wu Xiangwen; Shi We; Yu Jinzhong
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/23
1.3 mu m GaInNAs/GaAs multiple-quantum-wells resonant-cavity-enhanced photodetectors 会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
Zhang W; Pan Z; Li LH; Zhang RK; Lin YW; Wu RG
收藏  |  浏览/下载:9/0  |  提交时间:2010/10/29
Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes 会议论文
4th conference on light-emitting diodes (leds), san jose, ca, jan 26-27, 2000
Wang GH; Ma XY; Zhang YF; Wang ST; Li YZ; Chen LH
收藏  |  浏览/下载:11/0  |  提交时间:2010/10/29


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