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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2000    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Han PD 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 AlGaN/GaN heterostructures  In-doping  2DEG  electron sheet density  X-ray diffraction  etching  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MOBILITY  GROWTH  FILMS   Exciton states and optical spectra in CdSe nanocrystallite quantum dots 期刊论文 physical review b, 2000, 卷号: 61, 期号: 23, 页码: 15880-15886 作者:  Li JB 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 ELECTRONIC-STRUCTURE  SEMICONDUCTOR CLUSTERS  SIZE DEPENDENCE  ENERGY-LEVELS  CRYSTALLITES  ASSIGNMENT  WURTZITE  SPHERES  BANDS  DARK   Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots 期刊论文 physical review b, 2000, 卷号: 61, 期号: 8, 页码: 5530-5534 Wang HL; Yang FH; Feng SL; Zhu HJ; Ning D; Wang H; Wang XD 收藏  |  浏览/下载：49/0  |  提交时间：2010/08/12 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 期刊论文 compound semiconductors 1999, 2000, 期号: 166, 页码: 251-256 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures 期刊论文 applied physics letters, 2000, 卷号: 76, 期号: 24, 页码: 3537-3539 Pan D; Towe E; Kennerly S; Kong MY 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 INFRARED PHOTODETECTORS  ENERGY-LEVELS  ISLANDS  GROWTH  INGAAS  GAAS   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 会议论文 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 期刊论文 physica e-low-dimensional systems & nanostructures, 2000, 卷号: 7, 期号: 3-4, 页码: 383-387 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY