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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation 期刊论文 chinese physics b, 2010 Xue Shou-Bin; Huang Ru; Huang De-Tao; Wang Si-Hao; Tan Fei; Wang Jian; An Xia; Zhang Xing 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 CMOS devices  displacement damage  heavy ion irradiation  gamma ray irradiation  THIN GATE OXIDE  INDUCED LEAKAGE CURRENT  RELIABILITY DEGRADATION  SOI MOSFETS  BREAKDOWN  STRIKES  DEVICES  STRESS   A novel dual-doping floating-gate (DDFG) flash memory featuring low power and high reliability application 期刊论文 ieee electron device letters, 2007 Li, Yan; Huang, Ru; Cai, Yimao; Zhou, Falong; Shan, Xiaonan; Zhang, Xing; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 flash memory  floating gate  low power  programming speed  retention time  stress-induced leakage current (SILC)  INJECTION   The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses 期刊论文 中国物理英文版, 2005 Wang, YG; Xu, MZ; Tan, CH; Zhang, JF; Duan, XR 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/16 stress induced leakage current  oxygen-related donor-like defects  trap-assisted tunnelling  ultra-thin gate oxide  CURRENT TRANSPORT MECHANISM  ASSISTED TUNNELING MODEL  SILICON DIOXIDE FILMS  DEGRADATION  INSULATORS  BEHAVIOR  FIELD  SIO2   The experimental investigation on Stress-Induced Leakage Current under Fowler-Nordheim constant voltage stress 其他 2001-01-01 Wei, JL; Mao, LF; Xu, MZ; Tan, CH 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 Fowler-Nordheim stress  Stress-Induced Leakage Current  THIN SIO2-FILMS  MECHANISM  OXIDES