Impact of the displacement damage in channel and source/drain regions on   the DC characteristics degradation in deep-submicron MOSFETs after heavy   ion irradiation

doi:10.1088/1674-1056/19/11/117307

CORC > 北京大学 > 信息科学技术学院

	Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation
	Xue Shou-Bin ; Huang Ru ; Huang De-Tao ; Wang Si-Hao ; Tan Fei ; Wang Jian ; An Xia ; Zhang Xing
刊名	chinese physics b
	2010
关键词	CMOS devices displacement damage heavy ion irradiation gamma ray irradiation THIN GATE OXIDE INDUCED LEAKAGE CURRENT RELIABILITY DEGRADATION SOI MOSFETS BREAKDOWN STRIKES DEVICES STRESS
DOI	10.1088/1674-1056/19/11/117307
英文摘要	This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep submicron MOSFETs Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductance, etc The radiation-Induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results Corresponding explanations and analysis are discussed; Physics, Multidisciplinary; SCI(E); EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 6; ARTICLE; 11; 19
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291938]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xue Shou-Bin,Huang Ru,Huang De-Tao,et al. Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation[J]. chinese physics b,2010.
APA	Xue Shou-Bin.,Huang Ru.,Huang De-Tao.,Wang Si-Hao.,Tan Fei.,...&Zhang Xing.(2010).Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation.chinese physics b.
MLA	Xue Shou-Bin,et al."Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation".chinese physics b (2010).