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	The experimental investigation on Stress-Induced Leakage Current under Fowler-Nordheim constant voltage stress
	Wei, JL ; Mao, LF ; Xu, MZ ; Tan, CH
	2001
关键词	Fowler-Nordheim stress Stress-Induced Leakage Current THIN SIO2-FILMS MECHANISM OXIDES
英文摘要	In this investigation, we have presented the Stress-induced Leakage Current (SILC) phenomenon in ultrathin gate oxide p-MOSFET under FN high field stress. The SILC in ultrathin gate oxide is proportional to exp(B . E.). The SILC plot of ln(J,,,) versus E. is linear. The intercept and slope of this straight line of in(j,,,) vs. E-ox plot will change with stress time, the intercept increases and the slope decreases, during the initial stress stage and saturates after long stress time. The intercept and slope of the SILC plot and ln(J.) all not only can be fitted by two exponential decay functions, but also the time constant, T, and tau(2), of the fitted parameters are the same value. So we think there two types of trap play very important role in SILC of ultrathin oxide.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293971]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wei, JL,Mao, LF,Xu, MZ,et al. The experimental investigation on Stress-Induced Leakage Current under Fowler-Nordheim constant voltage stress. 2001-01-01.

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