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期刊论文 [30]
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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
作者:
Chen QS(陈启生)
;
Zhu P(朱鹏)
;
He M(何蒙)
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2020/03/11
Computer simulation
Defects
Heat transfer
Stresses
Growth from vapor
Semiconducting silicon compounds
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers
期刊论文
Journal of Crystal Growth, 2019, 卷号: Vol.507, 页码: 143-145
作者:
Yingxi Niu
;
Xiaoyan Tang
;
Pengfei Wu
;
Lingyi Kong
;
Yun Li
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/13
A1
Surfaces
A3
Chemical
vapor
deposition
processes
B2
Semiconducting
materials
B2
Semiconducting
silicon
compounds
Investigation of electronic structures and optical properties of β -Si3N4 doped with IV A elements: A first-principles simulation
期刊论文
AIP Advances, 2018, 卷号: 8, 期号: 4
作者:
Lu, Xuefeng
;
Gao, Xu
;
Ren, Junqiang
;
Li, Cuixia
;
Guo, Xin
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2022/02/17
Electronic structure
Energy gap
Germanium compounds
Microelectronics
Semiconducting germanium
Silicon nitride
Charge difference
First-principles simulations
Formation energies
Generalized gradient approximations
Indirect band gap
Micro-electronic devices
Mulliken populations
Perdew-burke-ernzerhof
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: Vol.504, 页码: 37-40
作者:
Niu Yingxi
;
Tang Xiaoyan
;
Sang Ling
;
Li Yun
;
Kong Lingyi
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/26
Surfaces
Defects
Chemical
vapor
deposition
processes
Semiconducting
materials
Semiconducting
silicon
compounds
A unified channel potential model for asymetrical dual gate a-Si:H thin film transistors (EI收录)
期刊论文
Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science), 2016, 卷号: 44, 页码: 30-36 and 43
作者:
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/24
Functions
Mathematical transformations
Reconfigurable hardware
Semiconducting organic compounds
Silicon
Surface potential
Thin films
Improvement of the thermal design in the SiC PVT growth process
会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
作者:
Jiang YN(姜燕妮)
;
Jiang YN(姜燕妮)
;
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Zhang H
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2014/02/24
Fluid flows
Mass transfer
Growth from vapor
Semiconducting silicon compounds
Improvement of the thermal design in the SiC PVT growth process
期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
作者:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2014/02/13
Fluid flows
Mass transfer
Growth from vapor
Semiconducting silicon compounds
Lattice-matching of Si grown on 6H-SiC(000-1) C-face
期刊论文
2014, 卷号: 385, 页码: 111-114
作者:
Li, L.B.
;
Chen, Z.M.
;
Xie, L.F.
;
Yang, C.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/20
Crystal structure
Interfaces
Chemical vapor deposition processes
Semiconducting silicon compounds
Heterostructure semiconductor devices
Surface morphology and roughness of Cu thin films prepared by ionized cluster beam deposition
会议论文
2012 International Conference on Frontiers of Advanced Materials and Engineering Technology, FAMET 2012, Xiamen, China, January 4, 2012 - January 5, 2012
作者:
Cao, Bo
;
Yang, Tongrui
;
Li, Gongping
;
Cho, Seong Jin
;
Kim, Hee
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/01/20
Surface morphology
Atomic force microscopy
Chemical modification
Copper
Deposition
Engineering technology
Ionization
Ions
Morphology
Semiconducting silicon compounds
Surface roughness
Surfaces
Thin films
Vapor deposition
Acceleration voltages
Average grain size
Cu Films
Cu thin film
Deposition conditions
Ionized cluster beam deposition
Ionized cluster beams
P-type Si
Performance improvement of chemo-mechanical grinding in single crystal silicon machining by the assistance of elliptical ultrasonic vibration
期刊论文
http://dx.doi.org/10.1504/IJAT.2011.041607, 2011
Wu, Yongbo
;
Li, Yaguo
;
Wang, Zhenzhong
;
Yang, Wei
;
Zhou, Libo
;
王振忠
;
杨炜
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2015/07/22
Chemical mechanical polishing
Grinding (comminution)
Machining
Monocrystalline silicon
Semiconducting silicon compounds
Silicon wafers
Single crystals
Stripping (removal)
Surface defects
Surfaces
Ultrasonic effects
Ultrasonic waves -
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