Improvement of the thermal design in the SiC PVT growth process

	Improvement of the thermal design in the SiC PVT growth process
	Yan JY(颜君毅); Chen QS(陈启生); Jiang YN(姜燕妮); Zhang H
刊名	Journal of Crystal Growth
	2014
通讯作者邮箱	qschen@imech.ac.cn
卷号	385 页码:34-37
关键词	Fluid flows Mass transfer Growth from vapor Semiconducting silicon compounds
ISSN号	0022-0248
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
产权排序	[Yan, J-Y; Chen, Q-S; Jiang, Y-N] Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; [Zhang, H.] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China
合作状况	国内
中文摘要	The physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.
学科主题	微重力流体力学
分类号	二类/Q2
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	PHYSICAL-VAPOR TRANSPORT ; CONVECTIVE HEAT-TRANSFER ; SUBLIMATION GROWTH ; BULK GROWTH ; CRYSTALS ; KINETICS ; MODEL
收录类别	SCI ; EI
资助信息	The work was supported by the National Natural Science Foundation of China under Grant nos.10972226 and 11272320.
原文出处	http://dx.doi.org/10.1016/j.jcrysgro.2013.02.031
语种	英语
WOS记录号	WOS:000327250100007
公开日期	2014-02-13
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/48077]
专题	力学研究所_国家微重力实验室
推荐引用方式 GB/T 7714	Yan JY,Chen QS,Jiang YN,et al. Improvement of the thermal design in the SiC PVT growth process[J]. Journal of Crystal Growth,2014,385:34-37.
APA	Yan JY,Chen QS,Jiang YN,&Zhang H.(2014).Improvement of the thermal design in the SiC PVT growth process.Journal of Crystal Growth,385,34-37.
MLA	Yan JY,et al."Improvement of the thermal design in the SiC PVT growth process".Journal of Crystal Growth 385(2014):34-37.