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1 meV electron irradiation and post-annealing effects of GaInAsN diluted nitride alloy with 1 eV bandgap energy 期刊论文
THIN SOLID FILMS, 2020, 卷号: 709, 期号: 9, 页码: 1-5
作者:  Sailai, M (Sailai, Momin)[ 1 ];  Lei, QQ (Lei, Qi Qi)[ 1,2 ];  Aierken, A (Aierken, Abuduwayiti)[ 1,3 ];  Heini, M (Heini, Maliya)[ 1,4 ];  Zhao, XF (Zhao, Xiao Fan)[ 1 ]
收藏  |  浏览/下载：28/0  |  提交时间：2020/10/23
Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination 期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 110, 期号: 4
作者:  Kang TT;  Zhang YH;  Chen PP;  Wang ZH;  Yamamoto A
收藏  |  浏览/下载：53/0  |  提交时间：2018/11/20
Morphology and Optical Properties of RF Sputtering Deposited Indium Nitride Layers Under Different N-2/Ar Ratio 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 卷号: 17, 期号: 1, 页码: 524-529
作者:  Li, Hai-Zhu[1];  Li, Ruo-Ping[2];  Liu, Jun-Hui[3];  Han, Jun-He[4];  Huang, Ming-Ju[5]
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/23
Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting. 期刊论文
Journal of Alloys & Compounds, 2017, 卷号: Vol.706, 页码: 629-636
作者:  Ganesh, V;  Alizadeh, M;  Shuhaimi, A;  Adreen, A;  Pandikumar, A
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/31
Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录) 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49
作者:  Lin, Zhiting[1,2];  Wang, Haiyan[1,2];  Lin, Yunhao[1,2];  Yang, Meijuan[1,2];  Wang, Wenliang[1,2]
收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24
Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN (EI收录) 期刊论文
Nanoscale Research Letters, 2015, 卷号: 10
作者:  Hu, Xiao-Long[1];  Wang, Hong[1];  Zhang, Xi-Chun[1]
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/25
Characterization of InGaN by Means of I-V Measurements of Respective Light-Emitting Diode (LED) by DLTS 期刊论文
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING, 2015, 卷号: 40, 页码: 263-268
作者:  Asghar, H. M. Noor ul Huda Khan;  Gilani, Zaheer Abbas;  Awan, M. S.;  Ahmad, I.;  Tan, Yi
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/09
Growth temperature induced physical property variation of InN films grown on nitrided sapphire substrate by PAMBE 期刊论文
VACUUM, 2015, 卷号: 112, 页码: 55-58
作者:  Zhao, Yang;  Wang, Hui;  Yang, Hang;  Wu, Guoguang;  Jing, Qiang
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/09
Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE 期刊论文
VACUUM, 2015, 卷号: 111, 页码: 15-18
作者:  Zhao, Yang;  Wang, Hui;  Wu, Guoguang;  Jing, Qiang;  Gao, Fubin
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/09
Near infrared electroluminescence from n-InN/p-NiO heterojunction light-emitting diode 期刊论文
MATERIALS RESEARCH EXPRESS, 2015, 卷号: 2, 页码: -
作者:  Zhao, Yang;  Wang, Hui;  Wu, Guoguang;  Jing, Qiang;  Gao, Fubin
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/09

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