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	Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting.
	Ganesh, V; Alizadeh, M; Shuhaimi, A; Adreen, A; Pandikumar, A; Jayakumar, M; Huang, NM; Ramesh, R; Baskar, K; Rahman, SA
刊名	Journal of Alloys & Compounds
	2017
卷号	Vol.706页码:629-636
关键词	INDIUM gallium nitride ENERGY gaps (Physics) PHOTOELECTROCHEMISTRY ELECTROLYSIS of water CORRELATION (Statistics)
ISSN号	0925-8388
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6044501
专题	湖南大学
作者单位	1.SRM Univ, Dept Phys & Nanotechnol, Chennai 603203, Tamil Nadu, India 2.Univ Malaya, UMPEDAC, Level Wisma R 3.4, Jalan Pantai Baharu, Kuala Lumpur 59990, Malaysia 4.Univ Malaya, Low Dimens Mat Res Ctr, Fac Sci, Dept Phys, Kuala Lumpur 50603, Malaysia 5.SRM Univ, Res Inst, Dept Chem, Chennai 603203, Tamil Nadu, India 6.CSIR Cent Elect Res Inst, Elect & Met Finishing Technol Div, Karaikkudi 630006, Tamil Nadu, India 7.Anna Univ, Ctr Crystal Growth, Chennai 600025, Tamil Nadu, India 8.Hunan Univ, Coll Phys & Microelect, Phys Mat Sci, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Ganesh, V,Alizadeh, M,Shuhaimi, A,et al. Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting.[J]. Journal of Alloys & Compounds,2017,Vol.706:629-636.
APA	Ganesh, V.,Alizadeh, M.,Shuhaimi, A.,Adreen, A.,Pandikumar, A.,...&Rahman, SA.(2017).Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting..Journal of Alloys & Compounds,Vol.706,629-636.
MLA	Ganesh, V,et al."Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting.".Journal of Alloys & Compounds Vol.706(2017):629-636.

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