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CORC

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Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
收藏  |  浏览/下载：56/0  |  提交时间：2020/03/31
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: Vol.778, 页码: 579-587
作者:  Shuang Liang;  Die Wang;  Mao Liu;  Gang He
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10
Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: Vol.757, 页码: 288-297
作者:  J.G. Lv;  Y.M. Liu;  P.H. Wang;  S.S. Jiang;  G. He
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:  Wendong Li;  Shuang Liang;  Li Zhu;  Mao Liu;  Mingliang Tian
收藏  |  浏览/下载：44/0  |  提交时间：2019/04/22
Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters 期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.5
作者:  Wendong Li;  Li Zhu;  Elvira Fortunato;  Bing Yang;  Gang He
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D.
收藏  |  浏览/下载：20/0  |  提交时间：2018/07/04
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M.
收藏  |  浏览/下载：14/0  |  提交时间：2018/07/04
Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206
作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M.
收藏  |  浏览/下载：16/0  |  提交时间：2018/07/04

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