×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
华南理工大学 [9]
内容类型
期刊论文 [9]
发表日期
2017 [2]
2016 [2]
2015 [3]
2014 [2]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共9条,第1-9条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录)
期刊论文
Materials Letters, 2017, 卷号: 207, 页码: 133-136
作者:
Li, Yuan[1,2]
;
Wang, Wenliang[1,2,3]
;
Lin, Yunhao[1,2]
;
Li, Xiaochan[1,2]
;
Huang, Liegen[1,2]
收藏
  |  
浏览/下载:117/0
  |  
提交时间:2019/04/24
Aluminum alloys
Epitaxial films
Gallium alloys
Growth temperature
Metallorganic chemical vapor deposition
Morphology
Organic chemicals
Surface roughness
Ultraviolet lasers
Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on AlxInyGa1?x?yN Electron Blocking Layer (EI收录)
期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 页码: 472-480
作者:
Lin, Zhiting[1,2]
;
Wang, Haiyan[1,2]
;
Chen, Shuqi[1,2]
;
Lin, Yunhao[1,2]
;
Yang, Meijuan[1,2]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
Band structure
Band structure
Electric fields
Electric fields
Gallium alloys
Gallium alloys
Gallium nitride
Gallium nitride
Polarization
Polarization
GaN-based light-emitting diodes on various substrates: a critical review
期刊论文
REPORTS ON PROGRESS IN PHYSICS, 2016, 卷号: 79
作者:
Li, Guoqiang[1,2,3]
;
Wang, Wenliang[1,2]
;
Yang, Weijia[1,2]
;
Lin, Yunhao[1,2]
;
Wang, Haiyan[1,2]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
GaN
light-emitting diodes
substrates
crystalline defects
nonpolar
Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录)
期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49
作者:
Lin, Zhiting[1,2]
;
Wang, Haiyan[1,2]
;
Lin, Yunhao[1,2]
;
Yang, Meijuan[1,2]
;
Wang, Wenliang[1,2]
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/04/24
Carrier concentration
Crystalline materials
Diodes
Efficiency
Gallium alloys
Gallium nitride
Quantum efficiency
Semiconducting indium compounds
Semiconductor quantum wells
Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录)
期刊论文
Journal of Materials Chemistry C, 2015, 卷号: 3, 页码: 1484-1490
作者:
Lin, Yunhao[1]
;
Zhou, Shizhong[1]
;
Wang, Wenliang[1]
;
Yang, Weijia[1]
;
Qian, Huirong[1]
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/04/25
Gallium nitride
Light emitting diodes
Metallorganic chemical vapor deposition
Nucleation
Organic chemicals
Organometallics
Silicon
Substrates
Transmission electron microscopy
X ray diffraction
Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates (EI收录)
期刊论文
Journal of Electronic Materials, 2015, 卷号: 44, 页码: 2670-2678
作者:
Yang, Weijia[1]
;
Wang, Wenliang[1]
;
Lin, Yunhao[1]
;
Liu, Zuolian[1]
;
Zhou, Shizhong[1]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/25
Electroluminescence
Full width at half maximum
Gallium alloys
Gallium nitride
Interfaces (materials)
Light
Molecular beam epitaxy
Pulsed laser deposition
Semiconductor quantum wells
Substrates
Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates
期刊论文
SCIENTIFIC REPORTS, 2015, 卷号: 5, 页码: 000-000
作者:
Wang, Wenliang[1]
;
Yang, Weijia[1]
;
Gao, Fangliang[1]
;
Lin, Yunhao[1]
;
Li, Guoqiang[1,2]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/25
Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates (EI收录)
期刊论文
Applied Surface Science, 2014, 卷号: 294, 页码: 1-8
作者:
Wang, Wenliang[1]
;
Yang, Weijia[1]
;
Liu, Zuolian[1]
;
Lin, Yunhao[1]
;
Zhou, Shizhong[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/25
Application programs
Atomic force microscopy
Copper
Cracks
Crystalline materials
Epitaxial growth
Field emission microscopes
Pulsed laser deposition
Spectroscopic ellipsometry
Substrates
Thick films
Transmission electron microscopy
X ray diffraction
Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition (EI收录)
期刊论文
Journal of Materials Science, 2014, 卷号: 49, 页码: 3511-3518
作者:
Wang, Wenliang[1]
;
Yang, Weijia[1]
;
Liu, Zuolian[1]
;
Lin, Yunhao[1]
;
Zhou, Shizhong[1]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/25
Atomic force microscopy
Gallium nitride
Optoelectronic devices
Pulsed laser deposition
Sapphire
Scanning electron microscopy
©版权所有 ©2017 CSpace - Powered by
CSpace