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	Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录)
	Lin, Yunhao[1]; Zhou, Shizhong[1]; Wang, Wenliang[1]; Yang, Weijia[1]; Qian, Huirong[1]; Wang, Haiyan[1]; Lin, Zhiting[1]; Liu, Zuolian[1]; Zhu, Yunnong[1]; Li, Guoqiang[1,2]
刊名	Journal of Materials Chemistry C
	2015
卷号	3页码:1484-1490
关键词	Gallium nitride Light emitting diodes Metallorganic chemical vapor deposition Nucleation Organic chemicals Organometallics Silicon Substrates Transmission electron microscopy X ray diffraction
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2212517
专题	华南理工大学
作者单位	1.[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China 2.[2] Department of Electronic Materials, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Lin, Yunhao[1],Zhou, Shizhong[1],Wang, Wenliang[1],等. Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录)[J]. Journal of Materials Chemistry C,2015,3:1484-1490.
APA	Lin, Yunhao[1].,Zhou, Shizhong[1].,Wang, Wenliang[1].,Yang, Weijia[1].,Qian, Huirong[1].,...&Li, Guoqiang[1,2].(2015).Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录).Journal of Materials Chemistry C,3,1484-1490.
MLA	Lin, Yunhao[1],et al."Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录)".Journal of Materials Chemistry C 3(2015):1484-1490.

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