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科研机构
华南理工大学 [14]
上海大学 [4]
暨南大学 [2]
内容类型
会议论文 [13]
会议 [6]
期刊论文 [1]
发表日期
2012 [1]
2011 [1]
2010 [2]
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A Junctionless Nanowire Transistor With a Dual-Material Gate
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 卷号: 59, 页码: 1829-1836
作者:
Lou, Haijun[1]
;
Zhang, Lining[2]
;
Zhu, Yunxi[3]
;
Lin, Xinnan[4]
;
Yang, Shengqi[5]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/30
Dual-material gate (DMG)
junctionless
nanowire
numerical simulation
single-material gate (SMG)
Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
会议论文
NSTI Nanotechnology Conference and Expo, 2011-06-13
作者:
Xu, Jiaojiao[1]
;
Ma, Chenyue[2]
;
Zhang, Chenfei[3]
;
Zhang, Xiufang[4]
;
Wu, Wen[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/30
FinFET device
process fluctuation
vertical nonuniformity
performance variation
A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance
会议论文
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010-12-15
作者:
Guo, Xinjie[1]
;
Wang, Shaodi[2]
;
Ma, Chenyue[3]
;
Zhang, Chenfei[4]
;
Lin, Xinnan[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/30
Low gain-error instrumentation amplifier for current sensing
会议论文
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010-12-15
作者:
Wang, Jiongming[1]
;
Ge, Fuding[2]
;
Yang, Shengqi[3]
;
Lin, Xinnan[4]
;
He, Jin[5]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/30
Investigation of The NBTI Induced Mobility Degradation for Precise Circuit Aging Simulation (CPCI-S收录)
会议
作者:
Ma, Chenyue[1]
;
Li, Xiangbin[1]
;
Sun, Fu[1]
;
Zhang, Lining[2]
;
Lin, Xinnan[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/11
NBTI
mobility degradation
hot carrier injection
self-heating effect
coupling
An Algorithm of Training Sample Selection for Integrated Circuit Device Modeling Based on Artificial Neural Networks (CPCI-S收录)
会议
作者:
Zhang, Zhiyuan[1]
;
Cui, Xiaole[1]
;
Lin, Xinnan[1]
;
Zhang, Lining[2]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/11
device modeling
artificial neural networks
training sample size
training accuracy
Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors (CPCI-S收录)
会议
作者:
He, Hongyu[1,2]
;
Deng, Wanling[3]
;
Liu, Yuan[4]
;
Lin, Xinnan[2]
;
Zheng, Xueren[5]
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/04/11
The Immunity of Doping-less Junctionless Transistor Variations Including the Line Edge Roughness (CPCI-S收录)
会议
作者:
Wan, Wenbo[1]
;
Lou, Haijun[1,2]
;
Xiao, Ying[1]
;
Lin, Xinnan[1]
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/04/11
charge-plasma
Junctionless
LER
variation
Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors (EI收录)
会议
Hong Kong, Hong kong,
作者:
He, Hongyu[1,2]
;
Deng, Wanling[3]
;
Liu, Yuan[4]
;
Lin, Xinnan[2]
;
Zheng, Xueren[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/11
Drain current
Electron devices
Leakage currents
Polycrystalline materials
Polysilicon
Power spectral density
Solid state devices
Spectral density
Thin film transistors
Thin films
Analysis of 1/f Noise for Polycrystalline Silicon TFTs Considering Mobility Power-Law Parameter (CPCI-S收录)
会议
作者:
He, Hongyu[1,2]
;
Liu, Yuan[3]
;
Wang, Hao[4]
;
Lin, Xinnan[2]
;
Zheng, Xueren[5]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/11
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