QQ客服 官方微博 反馈留言

	Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity
	Xu, Jiaojiao[1]; Ma, Chenyue[2]; Zhang, Chenfei[3]; Zhang, Xiufang[4]; Wu, Wen[5]; Cao, Yu[6]; Wang, Wenping[7]; Ye, Yun[8]; Yang, Shengqi[9]; Lin, Xinnan[10]
	2011
会议名称	NSTI Nanotechnology Conference and Expo
会议日期	2011-06-13
关键词	FinFET device process fluctuation vertical nonuniformity performance variation
页码	176-179
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2304300
专题	上海大学
作者单位	1.[1]Peking Univ, Key Lab Integrated Microsyst, Sch Comp & Informat Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China. 2.Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China. 3.[2]Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China. 4.[3]Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China. 5.[4]Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China. 6.[5]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, W303,West Tower,IER Bldg,High Tech Ind Pk South, Shenzhen 518057, Peoples R China. 7.[6]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, W303,West Tower,IER Bldg,High Tech Ind Pk South, Shenzhen 518057, Peoples R China. 8.[7]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, W303,West Tower,IER Bldg,High Tech Ind Pk South, Shenzhen 518057, Peoples R China. 9.[8]Peking Univ, Shenzhen SOC Key Lab, PKU HKUST Shenzhen Inst, W303,West Tower,IER Bldg,High Tech Ind Pk South, Shenzhen 518057, Peoples R China. 10.[9]Shanghai Univ, Commun & Informat Engn Sch, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Xu, Jiaojiao[1],Ma, Chenyue[2],Zhang, Chenfei[3],et al. Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity[C]. 见:NSTI Nanotechnology Conference and Expo. 2011-06-13.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。