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	A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance
	Guo, Xinjie[1]; Wang, Shaodi[2]; Ma, Chenyue[3]; Zhang, Chenfei[4]; Lin, Xinnan[5]; Wu, Wen[6]; He, Frank[7]; Wang, Wenping[8]; Liu, Zhiwei[9]; Zhao, Wei[10]
	2010
会议名称	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
会议日期	2010-12-15
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2313733
专题	上海大学
作者单位	[1]Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China |Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [2]Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China |Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [3]Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [4]Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China |Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [5]Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China [6]Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [7]Key Laboratory of Integrated Microsystems, School of Computer and Information Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China |Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [8]Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [9]Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [10]Peking University, Shenzhen SOC Key Laboratory, Shenzhen 518057, China [11]School of Comm. and Info. Eng., Shanghai University, Shanghai 200072, China
推荐引用方式 GB/T 7714	Guo, Xinjie[1],Wang, Shaodi[2],Ma, Chenyue[3],et al. A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance[C]. 见:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010-12-15.

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