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CORC

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Neoantigen load as a prognostic and predictive marker for stage II/III non-small cell lung cancer in Chinese patients 期刊论文
THORACIC CANCER, 2021
作者:  Gong, Lei;  He, Ronghui;  Xu, Yanjun;  Luo, Taobo;  Jin, Kaixiu
收藏  |  浏览/下载：38/0  |  提交时间：2021/08/31
Data-Driven Optimization for Cooperative Edge Service Provisioning With Demand Uncertainty 期刊论文
IEEE INTERNET OF THINGS JOURNAL, 2021, 卷号: 8, 期号: 6, 页码: 4317-4328
作者:  Li, Liang;  Shi, Dian;  Hou, Ronghui;  Li, Xuanheng;  Wang, Jie
收藏  |  浏览/下载：17/0  |  提交时间：2021/12/01
Synthesis and biological evaluation of anthraquinone derivatives as allosteric phosphoglycerate mutase 1 inhibitors for cancer treatment 期刊论文
EUROPEAN JOURNAL OF MEDICINAL CHEMISTRY, 2019, 卷号: 168
作者:  Huang, Ke;  Jiang, Lulu;  Liang, Ronghui;  Li, Huiti;  Ruan, Xiaoxue
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/05
Multiregional radiomics phenotypes at MR imaging predict MGMT promoter methylation in Glioblastoma 会议论文
布拉格, 2018
作者:  Hongmin Bai;  Zhi-Cheng Li;  Yinsheng Chen;  Qiuchang Sun;  Qihua Li
收藏  |  浏览/下载：76/0  |  提交时间：2019/01/31
10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文
ELECTRONICS LETTERS, 2018
作者:  Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
收藏  |  浏览/下载：87/0  |  提交时间：2019/03/27
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文
AIP ADVANCES, 2018
作者:  Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie
收藏  |  浏览/下载：65/0  |  提交时间：2019/03/27
Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018
作者:  Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie
收藏  |  浏览/下载：46/0  |  提交时间：2019/03/27
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  Deng, Xuguang(邓旭光);  Li, Xiang;  Xu, Ning;  Hao, Ronghui(郝荣晖);  Zhang, Xinping
收藏  |  浏览/下载：48/0  |  提交时间：2019/03/27
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Ding, Xiaoyu;  Yu, Guohao;  Cheng, Kai;  Cai, Yong;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：31/0  |  提交时间：2019/03/27
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors 期刊论文
Applied Physics Letters, 2018, 卷号: Vol.113 No.15, 页码: 152104
作者:  Ning Xu;  Ronghui Hao;  Fu Chen;  Xiaodong Zhang;  Hui Zhang
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/26

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