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CORC

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Ca2+/Calmodulin-dependent Protein Kinase IV-mediated LIM Kinase Activation Is Critical for Calcium Signal-induced Neurite Outgrowth 期刊论文
JOURNAL OF BIOLOGICAL CHEMISTRY, 2009, 卷号: 284, 期号: 42
作者:  Mizuno, Kensaku;  Mishima, Toshiaki;  Takemura, Miyohiko;  Wang, Yan;  Kasahara, Jiro
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/05
Semiconductor laser element and semiconductor laser 专利
专利号: US6999486, 申请日期: 2006-02-14, 公开日期: 2006-02-14
作者:  KUNIYASU, TOSHIAKI;  HAYAKAWA, TOSHIRO;  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/24
Semiconductor laser device in which near-edge portion of upper cladding layer is insulated for preventing current injection 专利
专利号: US6901100, 申请日期: 2005-05-31, 公开日期: 2005-05-31
作者:  MUKAIYAMA, AKIHIRO;  FUKUNAGA, TOSHIAKI;  KUNIYASU, TOSHIAKI
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/26
Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 专利
专利号: US6888866, 申请日期: 2005-05-03, 公开日期: 2005-05-03
作者:  KUNIYASU, TOSHIAKI;  YAMANAKA, FUSAO;  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/26
Semiconductor laser and method of manufacturing the same 专利
专利号: US6876688, 申请日期: 2005-04-05, 公开日期: 2005-04-05
作者:  HAYAKAWA, TOSHIRO;  FUKUNAGA, TOSHIAKI;  WADA, MITSUGU
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/24
Semiconductor laser element including optical waveguide layers which have gradually varying bandgaps so as to reduce electrical resistance at interfaces 专利
专利号: US20050047463A1, 申请日期: 2005-03-03, 公开日期: 2005-03-03
作者:  AKINAGA, FUJIO;  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/31
Semiconductor laser device 专利
专利号: US6856636, 申请日期: 2005-02-15, 公开日期: 2005-02-15
作者:  OHGOH, TSUYOSHI;  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：13/0  |  提交时间：2020/01/13
InGaAsP or InGaAs semiconductor laser element in which near-edge portion of active layer is substituted with GaAs optical waveguide layer having greater bandgap than active layer 专利
专利号: US6816524, 申请日期: 2004-11-09, 公开日期: 2004-11-09
作者:  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/26
Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited 专利
专利号: US6643306, 申请日期: 2003-11-04, 公开日期: 2003-11-04
作者:  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/26
Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation 专利
专利号: US20030128731A1, 申请日期: 2003-07-10, 公开日期: 2003-07-10
作者:  FUKUNAGA, TOSHIAKI
收藏  |  浏览/下载：1/0  |  提交时间：2020/01/18

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