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	Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited
	FUKUNAGA, TOSHIAKI
	2003-11-04
著作权人	NICHIA CORPORATION
专利号	US6643306
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited
英文摘要	In a semiconductor laser device having a substrate and an active region, the active region includes an active layer between tensile strain optical waveguide layers. The active layer includes at least one compressive strain quantum well sublayer. When the active layer includes more than one compressive strain quantum well sublayer, the active layer further includes at least one barrier sublayer being formed between the more than one quantum well sublayer and having an identical amount of tensile strain to that of the optical waveguide layers. The absolute value of a sum of a product of the strain and the total thickness of the at least one quantum well sublayer and a product of the strain and the total thickness of the optical waveguide layers and the at least one barrier sublayer (if any) is equal to or smaller than 0.05 nm.
公开日期	2003-11-04
申请日期	2001-10-31
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45680]
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	FUKUNAGA, TOSHIAKI. Semiconductor laser device in which compressive strain active layer is sandwiched between tensile strain optical waveguide layers and average strain is limited. US6643306. 2003-11-04.

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