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	Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation
	FUKUNAGA, TOSHIAKI
	2003-07-10
著作权人	NICHIA CORPORATION
专利号	US20030128731A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation
英文摘要	In a semiconductor laser element: an n-type cladding layer, an undoped or n-type optical waveguide layer, an Inx3Ga1-x3As1-y3Py3 quantum-well active layer, and an undoped or p-type optical waveguide layer are formed on an n-type GaAs substrate; a first etching stop layer and an n-type first current confinement layer are formed corresponding to high-refractive-index regions realizing an ARROW structure; a second etching stop layer and an n-type second current confinement layer are formed with an opening for current injection; and a p-type cladding layer and a p-type GaAs contact layer are formed over the entire upper surface. For example, the compositions of the cladding layers, the optical waveguide layers, the first etching stop layer, the first current confinement layer, the second etching stop layer, and the second current confinement layer are In0.49Ga0.51P (or Alz1Ga1-z1As) , GaAs, p-type Inx8Ga1-x8P, GaAs, n-type or p-type Inx8Ga1-x8P, and Alz1Ga1-z1As, respectively.
公开日期	2003-07-10
申请日期	2002-12-26
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88054]
专题	半导体激光器专利数据库
作者单位	NICHIA CORPORATION
推荐引用方式 GB/T 7714	FUKUNAGA, TOSHIAKI. Semiconductor laser device including arrow structure precisely formed to suppress P-As interdiffusion and Al oxidation. US20030128731A1. 2003-07-10.

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