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CORC

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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing
收藏  |  浏览/下载：34/0  |  提交时间：2022/01/19
Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 10, 页码: 1634-1637
作者:  Li, Zongzhen;  Liu, Jie;  Zhai, Pengfei;  Liu, Tianqi;  Bi, Jinshun
收藏  |  浏览/下载：10/0  |  提交时间：2022/01/19
The total ionizing dose effects of X-ray irradiation on graphene/Si Schottky diodes with a HfO2 insertion layer 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 期号: 9, 页码: 1-5
作者:  Xu, YN (Xu, Yannan)[ 1,2 ];  Bi, JS (Bi, Jinshun)[ 1,2 ];  Li, YD (Li, Yudong)[ 3 ];  Xi, K (Xi, Kai)[ 1 ];  Fan, LJ (Fan, Linjie)[ 4 ]
收藏  |  浏览/下载：9/0  |  提交时间：2020/01/19
Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory 期刊论文
Chinese physics B, 2018
作者:  Bi JS(毕津顺);  Xi K(习凯);  Li B(李博);  Wang HB(王海滨);  Ji LL(季兰龙)
收藏  |  浏览/下载：24/0  |  提交时间：2019/04/12
Impact of γ-ray irradiation on graphene nano-disc non-volatile memory 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Xi K(习凯);  Bi JS(毕津顺);  Hu Y(胡媛);  Li B(李博);  Liu J(刘璟)
收藏  |  浏览/下载：22/0  |  提交时间：2019/04/12
A Single Event Upset Tolerant Latch Design 会议论文
作者:  Haibin Wang;  Xixi Dai;  Yangsheng Wang;  Issam Nofal;  Li Cai
收藏  |  浏览/下载：35/0  |  提交时间：2019/05/13
Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3 (AHA)-based Charge Trapping Memory (CTM) Cell 期刊论文
Chinese Physics Letters, 2018
作者:  Xu YN(徐彦楠);  Bi JS(毕津顺);  Xu GB(许高博);  Li B(李博);  Xi K(习凯)
收藏  |  浏览/下载：21/0  |  提交时间：2019/04/18
A Single Event Upset Tolerant Latch Design 期刊论文
Microelectronics Reliability, 2018
作者:  Haibin Wang;  Xixi Dai;  Yangsheng Wang;  Issam Nofal;  Li Cai
收藏  |  浏览/下载：27/0  |  提交时间：2019/04/12
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive random access memory 期刊论文
MICROELECTRONICS RELIABILITY, 2018
作者:  Bi JS(毕津顺);  Yuan Duan;  Xi K(习凯);  Li B(李博)
收藏  |  浏览/下载：12/0  |  提交时间：2019/04/12
Study of γ-ray irradiation influence on TiN/HfO 2 /Si MOS capacitor by C-V and DLTS 期刊论文
Superlattices and Microstructures, 2018
作者:  Yun Li;  Yao Ma;  Wei Lin;  Peng Dong;  zhimei Yang
收藏  |  浏览/下载：38/0  |  提交时间：2019/04/18

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