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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
期刊论文
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:
Lu, Guangbao
;
Liu, Jun
;
Zheng, Qirong
;
Li, Yonggang
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/12/23
total ionizing dose effect
dynamic modeling
doubly-hydrogenated oxygen vacancy
microscopic mechanism
MOS devices
Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter
期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9
作者:
Wu, P (Wu, Ping) [1] , [2]
;
Wen, L (Wen, Lin) [3] , [4]
;
Xu, ZQ (Xu, Zhi-Qian) [1] , [2]
;
Jiang, YS (Jiang, Yun-Sheng) [1] , [2]
;
Guo, Q (Guo, Qi) [3] , [4]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/04/07
Integrated circuit
Totalionizingdose
Electromagneticradiation
Synergistic effect
Combined environment
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:
Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qiwen) [1] , [2]
;
Lu, W (Lu, Wu) [1] , [2]
;
Cui, JW (Cui, Jiangwei) [1] , [2]
;
Li, YD (Li, Yudong) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/04/07
Total ionizing dose irradiation
UTBB FD-SOI
1
f noise
Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:
Cui, X (Cui, Xu) [1] , [2] , [3]
;
Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3]
;
Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3]
;
Wei, Y (Wei, Ying) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/06/21
FinFET
1/f noise
TlD
CVS
bias dependence
Impact of High TID Irradiation on Stability of 65 nm SRAM Cells
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:
Cui, JW (Cui, Jiangwei) [1]
;
Zheng, QW (Zheng, Qiwen) [1]
;
Li, YD (Li, Yudong) [1]
;
Guo, Q (Guo, Qi) [1]
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/21
SRAM cells
Radiation effects
Arrays
Stability criteria
Circuit stability
Voltage measurement
Logic gates
Stability
static random-access memory (SRAM) cell
total ionizing dose (TID)
Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127
作者:
Yang, ZK (Yang, Zhikang) [1] , [2]
;
Wen, L (Wen, Lin) [1]
;
Li, YD (Li, Yudong) [1]
;
Liu, BK (Liu, Bingkai) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2022/06/21
Color CMOS Image Sensor
Radiation Damage
Total Ionizing Dose Effects
Bias Condition
Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT
期刊论文
SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7
作者:
Yang, GG (Yang, Guangan)[ 1 ]
;
Wu, WR (Wu, Wangran)[ 1 ]
;
Zhang, XY (Zhang, Xingyao)[ 2 ]
;
Tang, PY (Tang, Pengyu)[ 1 ]
;
Yang, J (Yang, Jing)[ 1 ]
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2021/03/15
SOI-LIGBT
Total-ionizing-dose
Radiation
Degradation
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
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