CORC

在结果中检索

CORC

浏览/检索结果: 共9条，第1-9条 帮助

已选(0)清除 条数/页：   排序方式：
Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs 期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:  Yu, Cheng-hao;  Guo, Hao-min;  Liu, Yan;  Wu, Xiao-dong;  Zhang, Li-long
收藏  |  浏览/下载：11/0  |  提交时间：2023/11/10
Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 9, 页码: 2358-2366
作者:  Zhen, Zixin;   Feng, Chun;   Wang, Quan;   Niu, Di;   Wang, Xiaoliang;   Tan, Manqing
收藏  |  浏览/下载：9/0  |  提交时间：2022/03/28
Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 404, 页码: 254-258
作者:  Wang, Bin;  Liu, Tianqi;  Liu, Jie;  Yang, Zhenlei;  Guo, Jinlong
收藏  |  浏览/下载：28/0  |  提交时间：2018/05/31
Application of seu imaging for analysis of device architecture using a 25 mev/u kr-86 ion microbeam at hirfl 期刊论文
Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2017, 卷号: 404, 页码: 254-258
作者:  Liu, Tianqi;  Yang, Zhenlei;  Guo, Jinlong;  Du, Guanghua;  Tong, Teng
收藏  |  浏览/下载：87/0  |  提交时间：2019/04/23
Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 卷号: 404, 页码: 254-258
作者:  Tong T(童腾);  Liu, J;  Ye, B;  Wang, B;  Liu, JD
收藏  |  浏览/下载：26/0  |  提交时间：2019/08/27
SINGLE EVENT EFFECT CHARACTERISTICS ANALYSIS OF TYPICAL CIRCUIT ELEMENTS IN SPACECRAFT POWER SYSTEMS 会议论文
作者:  Zhao Wen;  He Chaohui;  Chen Wei;  Guo Xiaoqiang;  Cong Peitian
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/26
SEGR-and SEB-hardened structure with DSPSOI in power MOSFETs 期刊论文
2017, 卷号: 38, 期号: 12, 页码: 68-72
作者:  Zhaohuan Tang;  Xinghua Fu;  Fashun Yang;  Kaizhou Tan;  Kui Ma
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31
Equivalent properties of single event burnout induced by different sources 期刊论文
CHINESE PHYSICS C, 2009, 卷号: 33, 期号: 5, 页码: 369-373
-
收藏  |  浏览/下载：2/0  |  提交时间：2015/05/25
Development of equipment for testing MOSFET's radiation effects 期刊论文
He Jishu/Nuclear Techniques, 2007, 卷号: 30, 期号: 2, 页码: 152-156
作者:  Zhao, Youxin
收藏  |  浏览/下载：4/0  |  提交时间：2022/02/18

©版权所有 ©2017 CSpace - Powered by CSpace