Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL

doi:10.1016/j.nimb.2017.01.069

	Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL
	Wang, Bin 1; Liu, Tianqi 1,4,5; Liu, Jie1 ; Yang, Zhenlei 2; Guo, Jinlong1 ; Du, Guanghua1 ; Tong, Teng 3; Wang, Xiaohui 1; Su, Hong1 ; Liu, Wenjing 1
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2017-08-01
卷号	404 页码:254-258
关键词	Heavy-ion microbeam High-energy Single event upset FPGA Imaging
ISSN号	0168-583X
DOI	10.1016/j.nimb.2017.01.069
英文摘要	The heavy-ion imaging of single event upset (SEU) in a flash-based field programmable gate array (FPGA) device was carried out for the first time at Heavy Ion Research Facility in Lanzhou (HIRFL). The three shift register chains with separated input and output configurations in device under test (DUT) were used to identify the corresponding logical area rapidly once an upset occurred. The logic units in DUT were partly configured in order to distinguish the registers in SEU images. Based on the above settings, the partial architecture of shift register chains in DUT was imaged by employing the microbeam of Kr-86 ion with energy of 25 MeV/u in air. The results showed that the physical distribution of registers in DUT had a high consistency with its logical arrangement by comparing SEU image with logic configuration in scanned area. (C) 2017 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[U1632271] ; Ministry of Science and Technology[2012YQ03014204]
WOS关键词	SINGLE EVENT UPSET ; INDUCED CHARGE ; POWER MOSFETS ; SYSTEM ; EPILAYER ; BURNOUT ; BULK ; SOI
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000404709900048
资助机构	National Natural Science Foundation of China ; Ministry of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/45116]
专题	近代物理研究所_实验物理中心
通讯作者	Liu, Jie
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Nanchang Rd 509, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Technol & Engn Ctr Space Utilizat, Beijing 100094, Peoples R China 3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Wang, Bin,Liu, Tianqi,Liu, Jie,et al. Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,404:254-258.
APA	Wang, Bin.,Liu, Tianqi.,Liu, Jie.,Yang, Zhenlei.,Guo, Jinlong.,...&Liu, Jiande.(2017).Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,404,254-258.
MLA	Wang, Bin,et al."Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 404(2017):254-258.