CORC

浏览/检索结果: 共69条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates. 期刊论文
Surface Science Reports, 2013, 卷号: Vol.68 No.1, 页码: 68-107
作者:  Sun,Zhaoqi;  He,Gang;  Chen,Xiaoshuang
收藏  |  浏览/下载:3/0  |  提交时间:2019/04/22
高Al组分AlGaN基紫外LED结构材料 期刊论文
2012
张彬彬; 李书平; 李金钗; 蔡端俊; 陈航洋; 刘达艺; 康俊勇
收藏  |  浏览/下载:3/0  |  提交时间:2016/05/17
The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 466-470
Wang, H; Li, SL; Xiong, H; Wu, ZH; Dai, JN; Tian, Y; Fang, YY; Chen, CQ
收藏  |  浏览/下载:27/0  |  提交时间:2013/04/17
Characteristics of high al content algan grown by pulsed atomic layer epitaxy 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载:173/0  |  提交时间:2019/05/12
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载:11/0  |  提交时间:2021/02/02
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载:16/0  |  提交时间:2021/02/02
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Jin P
收藏  |  浏览/下载:54/4  |  提交时间:2011/07/07
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载:125/5  |  提交时间:2010/04/22
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: 64211-64211
Chen, T; Hong, T; Pan, JQ; Chen, WX; Cheng, YB; Wang, Y; Ma, XB; Liu, WL; Zhao, LJ; Ran, GZ; Wang, W; Qin, GG
收藏  |  浏览/下载:15/0  |  提交时间:2012/03/24
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211
作者:  Wang Y;  Pan JQ
收藏  |  浏览/下载:113/0  |  提交时间:2010/03/08


©版权所有 ©2017 CSpace - Powered by CSpace