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	Characteristics of high al content algan grown by pulsed atomic layer epitaxy
	Pan, Xu1; Wang, Xiaoliang1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yang, Cuibai1,2; Li, Wei2; Wang, Weiying2; Jin, Peng2; Wang, Zhanguo1,2
刊名	Applied surface science
	2011-08-01
卷号	257期号:20页码:8718-8721
关键词	Photoluminescence Raman scattering Pulsed atomic layer epitaxy Algan alloys
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2011.05.055
通讯作者	Pan, xu(xpan@semi.ac.cn)
英文摘要	Al(0.91)ga(0.09)n epilayers have been obtained by pulsed atomic layer epitaxy (pale) technique on sapphire (0 0 0 1) substrates. deep ultraviolet (duv) photoluminescence (pl) spectroscopy and raman scattering spectrum have been employed to study the optical transitions in al(0.91)ga(0.09)n epilayers. we found the exciton-phonon interaction by fitting the asymmetric pl peak, in which the transverse optical phonon (to) and the longitudinal optical (lo) phonon are the main contributor. the abnormal s-shaped temperature dependence of the pl band peak is less pronounced or has disappeared. further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 mev) in al(0.91)ga(0.09)n. the formation of these localized states provides a favorable condition for efficient light emission. (c) 2011 elsevier b.v. all rights reserved.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; QUATERNARY ALINGAN ; ALUMINUM NITRIDE ; PHOTOLUMINESCENCE ; ALLOYS ; EXCITON ; GAN
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000291725100070
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428470
专题	半导体研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Characteristics of high al content algan grown by pulsed atomic layer epitaxy[J]. Applied surface science,2011,257(20):8718-8721.
APA	Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Wang, Zhanguo.(2011).Characteristics of high al content algan grown by pulsed atomic layer epitaxy.Applied surface science,257(20),8718-8721.
MLA	Pan, Xu,et al."Characteristics of high al content algan grown by pulsed atomic layer epitaxy".Applied surface science 257.20(2011):8718-8721.

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