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新疆理化技术研究所 [21]
北京大学 [12]
合肥物质科学研究院 [5]
清华大学 [4]
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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal
期刊论文
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:
Li, YD (Li, Yudong)
;
Liu, BK (Liu, Bingkai)
;
Wen, L (Wen, Lin)
;
Wei, Y (Wei, Ying)
;
Zhou, D (Zhou, Dong)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/10/14
Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Passivating Surface Defects of n-SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2020, 卷号: 6, 期号: 3
作者:
Peng, Ruixiang
;
Yan, Tingting
;
Chen, Junwei
;
Yang, Shangfeng
;
Ge, Ziyi
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2020/12/16
PERFORMANCE
NANOCRYSTALS
RECOMBINATION
ACCEPTORS
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:
Li, Zongzhen
;
Liu, Tianqi
;
Bi, Jinshun
;
Yao, Huijun
;
Zhang, Zhenxing
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2022/01/19
High-k HfO2
Heavy ion irradiation
Reliability
Charge trapping
Oxygen vacancy
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
Experimental and simulation study on space charge characteristics of epoxy resin filled with graphene oxide
期刊论文
IET SCIENCE MEASUREMENT & TECHNOLOGY, 2019, 卷号: 13, 期号: 3, 页码: 426-434
作者:
Zhang, Siyu
;
Chen, George
;
Zhang, Hongliang
;
Yan, Jiaqi
;
Liu, Peng
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2019/11/15
carrier mobility
charge exchange
graphene compounds
filled polymers
nanocomposites
resins
pulsed electroacoustic methods
space charge
CO
carrier mobility
high-temperature space charge
pulsed electroacoustic measurement
epoxy-based nanocomposite
conductivity
hetero charge accumulation
single-layer graphene oxide
charge migration
charge transport behaviour
epoxy resin
trap depth
charge distribution
trap density
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:99/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
Impact of TID on latch up induced by pulsed irradiation in CMOS circuits
期刊论文
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 卷号: 440, 页码: 95-100
作者:
Li, Ruibin
;
He, Chaohui
;
Chen, Wei
;
Li, Junlin
;
Wang, Chenhui
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/19
Base recombination currents
Dose rate
Latch-ups
Oxide trapped charge
Pulsed irradiation
Shallow trench isolation
Surface recombinations
Total Ionizing Dose
Oxygen Vacancy Defects Boosted High Performance p-Type Delafossite CuCrO2 Gas Sensors
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 40, 页码: 34727-34734
作者:
Tong, Bin
;
Deng, Zanhong
;
Xu, Bo
;
Meng, Gang
;
Shao, Jingzhen
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/25
p-type
delafossite CuCrO2
singly ionized oxygen vacancy
sensitivity
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