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Ion implantation isolation based micro-light-emitting diode device array properties 期刊论文
Acta Physica Sinica, 2020, 卷号: 69, 期号: 2, 页码: 7
作者:  C. H. Gao,F. Xu,L. Zhang,D. S. Zhao,X. Wei,L. J. Che,Y. Z. Zhuang,B. S. Zhang and J. Zhang
收藏  |  浏览/下载:3/0  |  提交时间:2021/07/06
Reduction of leakage current by O-2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors 期刊论文
APPLIED SURFACE SCIENCE, 2015, 卷号: 351, 页码: 1155-1160
作者:  Jiang, Ying;  Wang, Qingpeng;  Zhang, Fuzhe;  Li, Liuan;  Zhou, Deqiu
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/09
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
ieee electron device letters, 2014
Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Jin, Chunyan; Yang, Zhenchuan; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/10
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1200-1202
作者:  Cai, Y (蔡勇)
收藏  |  浏览/下载:33/0  |  提交时间:2015/02/03
128 x 128 sw/mw two-color hgcdte irfpas 期刊论文
Journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 6, 页码: 415-418
作者:  Ye Zhen-Hua;  Yin Wen-Ting;  Huang Jian;  Hu Wei-Da;  Chen Lu
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/10
Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Wang, N; Li, N; Liu, ZL; Yu, F; Li, GH
收藏  |  浏览/下载:38/0  |  提交时间:2010/03/09
SOI  MOSFET  
Investigation of hot carrier effects in SOI nMOSFET's operating in a Bi-MOS mode with mesa isolation 其他
2001-01-01
Huang, R; Hang, Y; He, J; Wang, YY
收藏  |  浏览/下载:5/0  |  提交时间:2015/11/13
Semiconductor laser array device and manufacture of same 专利
专利号: JP1987042592A, 申请日期: 1987-02-24, 公开日期: 1987-02-24
作者:  KUME MASAHIRO;  ITO KUNIO
收藏  |  浏览/下载:1/0  |  提交时间:2020/01/18
Single axial mode semiconductor laser 专利
专利号: JP1985145692A, 申请日期: 1985-08-01, 公开日期: 1985-08-01
作者:  MITO IKUO
收藏  |  浏览/下载:1/0  |  提交时间:2020/01/18
Manufacture of semiconductor laser 专利
专利号: JP1985136281A, 申请日期: 1985-07-19, 公开日期: 1985-07-19
作者:  KINOSHITA JIYUNICHI
收藏  |  浏览/下载:24/0  |  提交时间:2020/01/18


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