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Two-dimensional reconfigurable electronics enabled by asymmetric floating gate 期刊论文
Nano Research, 2022, 卷号: 15, 期号: 5, 页码: 4439-4447
作者:  T. Y. Jin;  J. Gao;  Y. A. Wang;  Y. Zheng;  S. Sun
收藏  |  浏览/下载：4/0  |  提交时间：2023/06/14
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]
收藏  |  浏览/下载：24/0  |  提交时间：2020/07/06
Influence of water vapor on the electronic property of MoS2 field effect transistors 期刊论文
NANOTECHNOLOGY, 2017
Shu, Jiapei; Wu, Gongtao; Gao, Song; Liu, Bo; Wei, Xianlong; Chen, Qing
收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03
Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017
Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Abnormal Dirac point shift in graphene field-effect transistrors 期刊论文
Materials Research Express, 2016
作者:  Peng SA(彭松昂);  Wang SQ(王少青);  Shi JY(史敬元);  Zhang DY(张大勇);  Huang XN(黄昕楠)
收藏  |  浏览/下载：12/0  |  提交时间：2017/05/08
Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer 期刊论文
NANOTECHNOLOGY, 2016, 卷号: 27, 期号: 36
作者:  Wu, GJ;  Wang, XD;  Wang, P;  Huang, H;  Chen, Y
收藏  |  浏览/下载：75/0  |  提交时间：2017/03/11
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers 期刊论文
DIAMOND AND RELATED MATERIALS, 2016, 卷号: 69
作者:  Wang, W;  Fu, K(付凯);  Hu, C;  Li, FN;  Liu, ZC
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/11
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 15
作者:  Hao, RH;  Fu, K(付凯);  Yu, GH(于国浩);  Li, WY;  Yuan, J
收藏  |  浏览/下载：43/0  |  提交时间：2017/03/11
Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: 3
作者:  Hua, MY;  Lu, YY;  Liu, SH;  Liu, C;  Fu, K(付凯)
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11

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