Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米加工公共平台

	Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers
	Wang, W; Fu, K(付凯); Hu, C; Li, FN; Liu, ZC; Li, SY; Lin, F; Fu, J; Wang, J; Wang, HX
刊名	DIAMOND AND RELATED MATERIALS
	2016
卷号	69
通讯作者	Wang, HX ; Wang, J
英文摘要	A diamond-based field-effect transistor (FET) with SiNX and ZrO2 double dielectric layer has been demonstrated. The SiNX and ZrO2 gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter methods, respectively. SiNX layer is found to have the ability to preserve the conduction channel at the surface of hydrogen-terminated diamond film. The leakage current density (J) of SiNX/ZrO2 diamond metal-insulator-semiconductor FET (MISFET) keeps lower than 3.88 x 10(-5) A.cm(-2) when the gate bias was changed from 2 V to - 8 V. The double dielectric layer FET operates in a p-type depletion mode, whose maximum drain-source current, threshold voltage, maximum transconductance, effective mobility and sheet hole density are determined to be -28.5 mA.mm(-1), 2.2 V, 4.53 mS.mm(-1), 38.9 cm(2).v(-1).s(-1), and 2.14 x 10(13) cm(-2), respectively. (C) 2016 Published by Elsevier B.V.
关键词[WOS]	HIGH CARRIER MOBILITY ; H-TERMINATED DIAMOND ; SURFACE CONDUCTIVITY ; FETS ; JUNCTION ; PROFILE ; VOLTAGE
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000385602000033
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4665]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Wang, W,Fu, K,Hu, C,et al. Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers[J]. DIAMOND AND RELATED MATERIALS,2016,69.
APA	Wang, W.,Fu, K.,Hu, C.,Li, FN.,Liu, ZC.,...&Wang, HX.(2016).Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers.DIAMOND AND RELATED MATERIALS,69.
MLA	Wang, W,et al."Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers".DIAMOND AND RELATED MATERIALS 69(2016).