Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米加工公共平台

	Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
	Hao, RH; Fu, K(付凯); Yu, GH(于国浩); Li, WY; Yuan, J; Song, L; Zhang, ZL; Sun, SC; Li, XJ; Cai, Y(蔡勇)
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	109 期号:15
通讯作者	Zhang, XP ; Zhang, BS(张宝顺)
英文摘要	In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 x 10(7), a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work. Published by AIP Publishing.
关键词[WOS]	FIELD-EFFECT TRANSISTORS ; GATE ALGAN/GAN HEMTS ; GAN ; ENHANCEMENT ; PASSIVATION ; HFET
收录类别	SCI
语种	英语
WOS记录号	WOS:000386534800027
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4867]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Hao, RH,Fu, K,Yu, GH,et al. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment[J]. APPLIED PHYSICS LETTERS,2016,109(15).
APA	Hao, RH.,Fu, K.,Yu, GH.,Li, WY.,Yuan, J.,...&Zhang, BS.(2016).Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment.APPLIED PHYSICS LETTERS,109(15).
MLA	Hao, RH,et al."Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment".APPLIED PHYSICS LETTERS 109.15(2016).