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Design of high performance MoS2-based non-volatile memory via ion beam defect engineering
期刊论文
2D MATERIALS, 2019, 卷号: 6, 期号: 3
作者:
Chen, Rui
;
Liu, Qinru
;
Liu, Jing
;
Zhao, Xiaolong
;
Liu, Jiangchao
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/05
2D materials
charge-trap memory
MoS2
Multiscale simulation of lateral charge loss in Si3N4 3D NAND flash based on density functional theory
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 卷号: 52, 期号: 39
作者:
Wu, Jixuan
;
Chen, Jiezhi
;
Jiang, Xiangwei
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  |  
浏览/下载:22/0
  |  
提交时间:2019/12/11
silicon nitride
3D NAND flash memory
trap levels
lateral charge loss
Atomistic Study of lateral Charge Diffusion Degradation During Program/Erase Cycling in 3-D NAND Flash memory
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 卷号: 7, 期号: 1, 页码: 626-631
作者:
Wu, Jixuan
;
Chen, Jiezhi
;
Jiang, Xiangwei
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  |  
浏览/下载:26/0
  |  
提交时间:2019/12/11
Silicon nitride
3D NAND
charge trapping
lateral charge diffusion
shallow trap
Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 卷号: 6, 期号: 1, 页码: 81-84
作者:
Ji, Hao
;
Wei, Yehui
;
Ma, Pengfei
;
Jiang, Ran
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/11
Hafnium oxide
charge trapping memory
NAND flash memory
On the Reliability of Charge-Trap (CT) Type Three-dimensional (3D) NAND Flash Memory
期刊论文
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, 2018
作者:
Chen, Jiezhi
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  |  
浏览/下载:11/0
  |  
提交时间:2019/12/11
On the Reliability of Charge-Trap (CT) Type Three-dimensional (3D) NAND Flash Memory
会议论文
14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), OCT 31-NOV 03, 2018
作者:
Chen, Jiezhi
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/31
Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory
期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:
Su, Teng-Yu
;
Huang, Chi-Hsin
;
Shih, Yu-Chuan
;
Wang, Tsang-Hsuan
;
Medina, Henry
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  |  
浏览/下载:0/0
  |  
提交时间:2019/11/15
Improvement of charge injection by using separated SiN as charge trapping layer in MONOS charge trap flash memory
期刊论文
IEEE Journal of the Electron Devices Society, 2017, 卷号: 6, 期号: 1, 页码: 81-84
作者:
Ji, Hao
;
Wei, Yehui
;
Ma, Pengfei
;
Jiang, Ran
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2019/12/12
Charge trapping memory
Hafnium oxide
NAND flash memory
Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory
期刊论文
Journal of Materials Chemistry C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:
Su, Teng-Yu
;
Huang, Chi-Hsin
;
Shih, Yu-Chuan
;
Wang, Tsang-Hsuan
;
Medina, Henry
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2020/11/14
Defects
Diodes
Rhenium compounds
RRAM
Schottky barrier diodes
Sputtering
Switching
Thin films
Titanium compounds
Conduction Mechanism
Defect distribution
Gradient distributions
Rectifying characteristics
Rectifying properties
Resistive Random Access Memory (ReRAM)
Resistive switching behaviors
Resistive switching memory
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 14
作者:
Zhou, Guangdong
;
Sun, Bai
;
Yao, Yanqing
;
Zhang, Huihui
;
Zhou, Ankun
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  |  
浏览/下载:27/0
  |  
提交时间:2017/02/14
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