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	Design of high performance MoS2-based non-volatile memory via ion beam defect engineering
	Chen, Rui; Liu, Qinru; Liu, Jing; Zhao, Xiaolong; Liu, Jiangchao; He, Lanli; Wang, Jing; Li, Wenqing; Xiao, Xiangheng; Jiang, Changzhong
刊名	2D MATERIALS
	2019
卷号	6期号:3
关键词	2D materials charge-trap memory MoS2
ISSN号	2053-1583
DOI	10.1088/2053-1583/ab115c
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4263762
专题	武汉大学
推荐引用方式 GB/T 7714	Chen, Rui,Liu, Qinru,Liu, Jing,et al. Design of high performance MoS2-based non-volatile memory via ion beam defect engineering[J]. 2D MATERIALS,2019,6(3).
APA	Chen, Rui.,Liu, Qinru.,Liu, Jing.,Zhao, Xiaolong.,Liu, Jiangchao.,...&Jiang, Changzhong.(2019).Design of high performance MoS2-based non-volatile memory via ion beam defect engineering.2D MATERIALS,6(3).
MLA	Chen, Rui,et al."Design of high performance MoS2-based non-volatile memory via ion beam defect engineering".2D MATERIALS 6.3(2019).

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