CORC

在结果中检索

CORC

浏览/检索结果: 共10条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:  Zhao, Cheng-Yu[1];  Li, Jun[2];  Zhong, De-Yao[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/24
High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 卷号: 13, 页码: 214-220
作者:  Li, Jun[1];  Huang, Chuan-Xin[2];  Zhao, Cheng-Yu[3];  Ding, Xingwei[4];  Zhang, Jian-Hua[5]
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
Diamond based field-effect transistors with SiNX and ZrO2 double dielectric layers 期刊论文
DIAMOND AND RELATED MATERIALS, 2016, 卷号: 69
作者:  Wang, W;  Fu, K(付凯);  Hu, C;  Li, FN;  Liu, ZC
收藏  |  浏览/下载：21/0  |  提交时间：2017/03/11
ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor 期刊论文
MICROELECTRONICS RELIABILITY, 2014, 卷号: 54, 页码: 2401-2405
作者:  Ding, Xingwei[1];  Zhang, Jianhua[2];  Zhang, Hao[3];  Ding, He[4];  Huang, Chuanxin[5]
收藏  |  浏览/下载：16/0  |  提交时间：2019/04/30
The electrical and switching properties of a metal-ferroelectric (Bi3.15Nd0.85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 页码: 3
作者:  Zhang, Y.;  Zhong, X. L.;  Wang, J. B.;  Song, H. J.;  Ma, Y.
收藏  |  浏览/下载：11/0  |  提交时间：2018/05/31
Electrical conduction mechanism in metal-ZrO2-silicon capacitor structures 期刊论文
2010, 2010
Wang, MT; Wang, TH; Lee, JYM
收藏  |  浏览/下载：4/0  |  提交时间：2017/06/15
Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 卷号: 9, 期号: 6, 页码: 959-963
Di, ZF; Zhang, M; Liu, WL; Shen, QW; Song, ZT; Lin, CL; Huang, AP; Chu, PK
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24
Studies on Al2O3/ZrO2/Al2O3 high K gate dielectrics applied in a fully depleted SOI MOSFET 期刊论文
METALS AND MATERIALS INTERNATIONAL, 2004, 卷号: 10, 期号: 5, 页码: 475-478
Lin, CL; Zhang, NL; Shen, QW
收藏  |  浏览/下载：18/0  |  提交时间：2012/03/24
Memory and negative photoconductivity effects of Ge nanocrystals embedded in ZrO2/Al2O3 gate dielectrics 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 1, 页码: 138
Wan, Q; Zhang, NL; Liu, WL; Lin, CL; Wang, TH
收藏  |  浏览/下载：16/0  |  提交时间：2013/09/18
Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 2, 页码: 273-276
Zhang, NL; Song, ZT; Shen, QW; Lin, CL
收藏  |  浏览/下载：7/0  |  提交时间：2012/03/24

©版权所有 ©2017 CSpace - Powered by CSpace