Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon

	Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon
	Zhang, NL ; Song, ZT ; Shen, QW ; Lin, CL
刊名	CHINESE PHYSICS LETTERS
	2003
卷号	20 期号:2 页码:273-276
关键词	FIELD-EFFECT-TRANSISTORS K GATE DIELECTRICS THERMAL-STABILITY RELIABILITY SI
ISSN号	0256-307X
通讯作者	Zhang, NL, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95501]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, NL,Song, ZT,Shen, QW,et al. Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon[J]. CHINESE PHYSICS LETTERS,2003,20(2):273-276.
APA	Zhang, NL,Song, ZT,Shen, QW,&Lin, CL.(2003).Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon.CHINESE PHYSICS LETTERS,20(2),273-276.
MLA	Zhang, NL,et al."Microstructural and electrical properties of ZrO2 thin films prepared on silicon on insulator with thin top silicon".CHINESE PHYSICS LETTERS 20.2(2003):273-276.