QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Regulating interlayer spacing with pillar and strain structures in Ti3C2 MXene layers by molecular welding for superior alkali metal ion storage 期刊论文 MATERIALS TODAY ENERGY, 2021, 卷号: 22 作者:  Liu, Mao-Cheng;  Zhang, Bin-Mei;  Zhang, Yu-Shan;  Gu, Bing-Ni;  Tian, Chen-Yang 收藏  |  浏览/下载：15/0  |  提交时间：2021/12/17 Two-dimensional materials  Organic molecular welding  Tunable interlayer spacing  Fast Li+/Na+ diffusion dynamics  High-rate capability   Molecular interdiffusion of hauling theory between dissimilar polymers based on novel USW 会议论文 Advanced Polymer Processing International Forum, APPF 2010, Qingdao, China, October 21, 2010 - October 23, 2010 作者:  Zhang, Guohong;  Qiu, Jianhui;  Shao, Liang;  Fu, Xie 收藏  |  浏览/下载：1/0  |  提交时间：2017/01/20 Welding  Acetal resins  Polymers  Scanning electron microscopy  Tensile strength  Ultrasonic welding  Ultrasonics  Welds  Inter-diffusion  Interdiffusion process  Poly-formaldehyde  Polyformaldehyde (POM)  Polylactide (PLA)  Polylactides  Polymer chains  Polymethyl methacrylate (PMMA)  Reptation  Scanning Electron Microscope  Welding strength   EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR 期刊论文 MODERN PHYSICS LETTERS B, 2009, 卷号: 23, 期号: 15, 页码: 1881-1887 Zhang, B; Chen, J; Wang, X; Wu, AM; Luo, JX; Wang, X; Zhang, MA; Wu, YX; Zhu, JJ; Yang, H 收藏  |  浏览/下载：9/0  |  提交时间：2011/11/04 CHEMICAL-VAPOR-DEPOSITION  LIGHT-EMITTING-DIODES  SI(111)  FILMS  REDUCTION  GROWTH  SUBSTRATE  STRESS   The growth morphologies of GaN layer on Si(111) substrate 期刊论文 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98 Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF 收藏  |  浏览/下载：21/0  |  提交时间：2010/08/12 Si(111) substrate  heteroepitaxy  metalorganic chemical vapor deposition  GaN  LIGHT-EMITTING-DIODES  CHEMICAL-VAPOR-DEPOSITION  NUCLEATION LAYERS  BUFFER LAYER  SILICON  SAPPHIRE  NITRIDE  EPITAXY  STRESS  STRAIN