The growth morphologies of GaN layer on Si(111) substrate

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	The growth morphologies of GaN layer on Si(111) substrate
	Lu YA ; Liu XL ; Lu DC ; Yuan HR ; Hu GQ ; Wang XH ; Wang ZG ; Duan XF
刊名	journal of crystal growth
	2003
卷号	247 期号:1-2 页码:91-98
关键词	Si(111) substrate heteroepitaxy metalorganic chemical vapor deposition GaN LIGHT-EMITTING-DIODES CHEMICAL-VAPOR-DEPOSITION NUCLEATION LAYERS BUFFER LAYER SILICON SAPPHIRE NITRIDE EPITAXY STRESS STRAIN
ISSN号	0022-0248
通讯作者	lu dc,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the growth morphologies of metalorganic chemical vapor deposition (mocvd) grown gan layer on si(111) substrate were studied using atomic force microscopy and transmission electron microscopy. it was found that the growth process of gan/si(111) consisted of two cycles of island growth and coalescence. these two cycles process differs markedly from that of one cycle process reported. the stress of evolving gan layers on si(111) was characterized by measuring the lattice constant c of gan using x-ray diffraction (xrd) technique. it was proposed that the large tensile stress within the film during growth initiated this second island growth cycle, and the interaction between the gan islands with high orientational fluctuation on the buffer layer induced this large tensile growth stress when coalescence occurred. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11686]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu YA,Liu XL,Lu DC,et al. The growth morphologies of GaN layer on Si(111) substrate[J]. journal of crystal growth,2003,247(1-2):91-98.
APA	Lu YA.,Liu XL.,Lu DC.,Yuan HR.,Hu GQ.,...&Duan XF.(2003).The growth morphologies of GaN layer on Si(111) substrate.journal of crystal growth,247(1-2),91-98.
MLA	Lu YA,et al."The growth morphologies of GaN layer on Si(111) substrate".journal of crystal growth 247.1-2(2003):91-98.