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一种垂直型NROM存储结构及其制备方法 专利
专利号: CN201010573812.7, 申请日期: 2014-04-16, 公开日期: 2012-05-30
作者:  刘明;  霍宗亮;  刘璟;  张满红
收藏  |  浏览/下载：6/0  |  提交时间：2015/05/14
A novel routine outage maintenance strategy for a generating unit 期刊论文
2010, 2010
Wei Shaoyan; Min Yong; Xu Fei
收藏  |  浏览/下载：2/0
Novel vertical channel double gate structures for high density and low power flash memory applications 期刊论文
science in china series f information sciences, 2008
Huang Ru; Zhou FaLong; Cai YiMao; Wu DaKe; Zhang Xing
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
Novel silicon-based flash cell structures for low power and high density memory applications 其他
2007-01-01
Huang, Ru; Zhou, Falong; Li, Yan; Cai, Yimao; Shan, Xiaonan; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications 其他
2007-01-01
Zhou, Falong; Cai, Yimao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jia; Guo, Ao; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10
VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications 其他
2007-01-01
Zhou, Falong; Cai, Ylinao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jla; Guo, Ao; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/12
VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications 期刊论文
Solid-State Electronics, 2007
Zhou, Falong; Cai, Yimao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jia; Guo, Ao; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping-layer ROM for high density flash memory applications 其他
2006-01-01
Zhou, Falong; Cai, Yimao; Huang, Ru; Li, Yan; Shan, Xiaonan; Liu, Jia; Guo, Ao; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13
Program/erase injection current characteristics of a low-voltage low-power NROM using high-K materials as the tunnel dielectric 期刊论文
semiconductor science and technology, 2006
Cai, YM; Huang, R; Shan, XN; Li, Y; Zhou, FL; Wang, YY
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13
A comparative study of program/erase characteristic of low-voltage low-power NROM using high-K materials as tunnel dielectric 其他
2006-01-01
Cai, Y.M.; Huang, R.; Shan, X.N.; Long, Z.F.; Li, Y.; Wang, Y.Y.
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13

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