Novel vertical channel double gate structures for high density and low   power flash memory applications

doi:10.1007/s11432-008-0075-4

CORC > 北京大学 > 信息科学技术学院

	Novel vertical channel double gate structures for high density and low power flash memory applications
	Huang Ru ; Zhou FaLong ; Cai YiMao ; Wu DaKe ; Zhang Xing
刊名	science in china series f information sciences
	2008
关键词	double gate devices flash memory high density low power
DOI	10.1007/s11432-008-0075-4
英文摘要	The flash memory technology meets physical and technical obstacles in further scaling. New structures and new materials are implemented as possible solutions. This paper focuses on two kinds of new flash cells for high density and low power memory applications based on the vertical channel double gate structure. The proposed VD-NROM with dual-nitride-trapping-layer and vertical structure can achieve four-bit-per-cell storage capability. And the proposed VSAS-FG cell benefits the high programming efficiency, low power and high density capability, which can be realized without any additional mask and can achieve the self-alignment of the split-gate channel and the floating-gate. The two novel flash cell structures can be considered as potential candidates for different flash memory applications.; Computer Science, Information Systems; SCI(E); 0; ARTICLE; 6; 799-806; 51
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152932]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang Ru,Zhou FaLong,Cai YiMao,et al. Novel vertical channel double gate structures for high density and low power flash memory applications[J]. science in china series f information sciences,2008.
APA	Huang Ru,Zhou FaLong,Cai YiMao,Wu DaKe,&Zhang Xing.(2008).Novel vertical channel double gate structures for high density and low power flash memory applications.science in china series f information sciences.
MLA	Huang Ru,et al."Novel vertical channel double gate structures for high density and low power flash memory applications".science in china series f information sciences (2008).