QQ客服 官方微博 反馈留言

	VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications
	Zhou, Falong ; Cai, Yimao ; Huang, Ru ; Li, Yan ; Shan, Xiaonan ; Liu, Jia ; Guo, Ao ; Zhang, Xing ; Wang, Yangyuan
	2007
英文摘要	A novel vertical channel nonvolatile memory cell with oxide-nitride-oxide- nitride-oxide (ONONO, dual nitride trapping layers) dielectrics stack is proposed and experimentally demonstrated for the first time. Compared with the conventional planar NROM cell, since the cell area of the proposed vertical structure is independent of the gate length, the VDNROM structure can relax the limitation of the gate length scaling, and can have high capability of cell area shrinking. The fabrication process of this VDNROM device is basically compatible with planar CMOS technology. The VDNROM cell can be programmed and erased by the hot carrier injection to the localized trapping dual-nitride-layers, so it can achieve a four physical bits storage capability each cell. The reliability behaviors including the cycling endurance and the bake retention at 150??C have also been investigated and show the acceptable characteristics. The experiment results verify the VDNROM cell as a good candidate for high-density applications. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ESSDER.2006.307679
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153691]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhou, Falong,Cai, Yimao,Huang, Ru,et al. VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications. 2007-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。