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Conduction-band nonparabolicity effect on refractive index and phase match in asymmetric quantum wells pumped by two infrared beams 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2018, 卷号: 32, 期号: 20
作者:  Cao, Xiaolong;  Che, Yongli;  Yao, Jianquan
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11
Influence of band nonparabolicity on intersub-band optical absorption in GaAs asymmetric quantum wells by difference frequency generation of two midinfrared waves 期刊论文
OPTICAL ENGINEERING, 2017, 卷号: 56, 期号: 3
作者:  Cao, Xiao-Long;  Che, Yong-Li;  Yao, Jian-Quan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Electron mobility in modulation-doped alsb/inas quantum wells 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 7, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：10/0  |  提交时间：2021/02/02
Spin dependence of electron effective masses in InGaAs/InAlAs quantum well 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 6, 页码: 63707
Wei LM; Gao KH; Liu XZ; Zhou WZ; Cui LJ; Zeng YP; Yu G; Yang R; Lin T; Shang LY; Guo SL; Dai N; Chu JH; Austing DG
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
Self-consistent analysis of alsb/inas high electron mobility transistor structures 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 4, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：0/0  |  提交时间：2021/02/02
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：212/46  |  提交时间：2010/10/11
Theoretical investigation of intersubband transition in alxga1-xn/gan/alyga1-yn step quantum well 期刊论文
Physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 453-461
作者:  Li, JM;  Lu, YW;  Han, XX;  Wu, JJ;  Liu, XL
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 453-461
Li, JM; Lu, YW; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：200/76  |  提交时间：2010/03/17

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