Electron mobility in modulation-doped AlSb/InAs quantum wells

doi:10.1063/1.3552417

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	Electron mobility in modulation-doped AlSb/InAs quantum wells
	Li, Yanbo 1,2; Zhang, Yang 1,2; Zeng, Yiping 1,2
刊名	JOURNAL OF APPLIED PHYSICS
	2011-04-01
卷号	109 期号:7 页码:7
ISSN号	0021-8979
DOI	10.1063/1.3552417
通讯作者	Zhang, Yang(terahertzantenna@163.com)
英文摘要	We present a theoretical study of electron mobility in modulation-doped AlSb/InAs quantum wells. The theory also accounts for the nonparabolicity effect. All major scattering mechanisms, including scattering by deformation potential and piezoelectric acoustic phonons, polar optical phonons, ionized impurities, and interface roughness, have been included in our calculations. The low field transport properties of the two dimensional electron gas (2DEG) in the AlSb/InAs quantum wells are studied as a function of temperature, quantum well width, and spacer width and strategies for optimizing the 2DEG mobility are discussed. Depending on the quantum well parameters, the high-mobility limit in this quantum well structure may be determined by either ionized impurity scattering or interface-roughness scattering. The calculated 2DEG mobilities are in very good agreement with the reported experimental data for modulation-doped AlSb/InAs quantum wells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552417]
资助项目	Chinese Academy of Sciences[ISCAS2009T04] ; Beijing Municipal Natural Science Foundation[2112040] ; Beijing Nova Program[2010B056]
WOS研究方向	Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000289949000051
资助机构	Chinese Academy of Sciences ; Beijing Municipal Natural Science Foundation ; Beijing Nova Program
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/105862]
专题	金属研究所_中国科学院金属研究所
通讯作者	Zhang, Yang
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, Yanbo,Zhang, Yang,Zeng, Yiping. Electron mobility in modulation-doped AlSb/InAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2011,109(7):7.
APA	Li, Yanbo,Zhang, Yang,&Zeng, Yiping.(2011).Electron mobility in modulation-doped AlSb/InAs quantum wells.JOURNAL OF APPLIED PHYSICS,109(7),7.
MLA	Li, Yanbo,et al."Electron mobility in modulation-doped AlSb/InAs quantum wells".JOURNAL OF APPLIED PHYSICS 109.7(2011):7.