Spin dependence of electron effective masses in InGaAs/InAlAs quantum well

	Spin dependence of electron effective masses in InGaAs/InAlAs quantum well
	Wei LM ; Gao KH ; Liu XZ ; Zhou WZ ; Cui LJ ; Zeng YP ; Yu G ; Yang R ; Lin T ; Shang LY ; Guo SL ; Dai N ; Chu JH ; Austing DG
刊名	journal of applied physics
	2011
卷号	110 期号:6 页码:63707
关键词	2-DIMENSIONAL ELECTRONS BAND NONPARABOLICITY FIELD HETEROSTRUCTURES SUBBAND GAS MAGNETOTRANSPORT
ISSN号	0021-8979
通讯作者	yu, g (reprint author), shanghai inst tech phys, chinese acad sci, natl lab infrared phys, shanghai 200083, peoples r china, yug@mai.sitp.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	special funds for major state basic research[2007cb924901]; national natural science foundation of china[60976093, 60906045, 10934007]; science and technology commission of shanghai[09jc1415700]; state key laboratory of functional materials for informatics; shanghai institute of technical physics of the chinese academy of sciences[q-zy-5]
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22657]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Wei LM,Gao KH,Liu XZ,et al. Spin dependence of electron effective masses in InGaAs/InAlAs quantum well[J]. journal of applied physics,2011,110(6):63707.
APA	Wei LM.,Gao KH.,Liu XZ.,Zhou WZ.,Cui LJ.,...&Austing DG.(2011).Spin dependence of electron effective masses in InGaAs/InAlAs quantum well.journal of applied physics,110(6),63707.
MLA	Wei LM,et al."Spin dependence of electron effective masses in InGaAs/InAlAs quantum well".journal of applied physics 110.6(2011):63707.