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浏览/检索结果: 共10条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer 期刊论文 chinese physics b, 2015, 卷号: 24, 期号: 2, 页码: 26802-26806 Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang 收藏  |  浏览/下载：14/0  |  提交时间：2016/03/29 High-quality InGaN epilayers grown by PA-MBE and abnormal incorporation behavior of Indium into InGaN 期刊论文 ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 8 作者:  Yang, H(杨辉);  Wang, JF(王建峰) 收藏  |  浏览/下载：15/0  |  提交时间：2014/01/13 InGaN epilayer  plasma-assisted molecular beam epitaxy  indium incorporation  crystalline quality   p-GaN退火对InGaN量子阱光学性能的影响 期刊论文 2013 孙丽; 张江勇; 陈明; 梁明明; 翁国恩; 张保平 收藏  |  浏览/下载：2/0  |  提交时间：2016/05/17 p型氮化镓  热退火  变温光致发光  铟团簇  位错密度  p-GaN  thermal annealing  temperature-dependent photoluminescence(PL)  In clusters  dislocation density   Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition 期刊论文 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 10 Qian, WN; Su, SC; Chen, H; Ma, ZG; Zhu, KB; He, M; Lu, PY; Wang, G; Lu, TP; Du, CH; Wang, Q; Wu, WB; Zhang, WW 收藏  |  浏览/下载：22/0  |  提交时间：2014/01/16 InGaN  reciprocal space map  indium incorporation  surface morphology   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Abnormal energy dependence of photoluminescence decay time in ingan epilayer 期刊论文 Chinese physics letters, 2004, 卷号: 21, 期号: 12, 页码: 2529-2532 作者:  Huang, JS;  Luo, XD;  Yang, XD;  Sun, Z;  Sun, BQ 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Structural and optical properties of quaternary alingan epilayers grown by mocvd with various tmga flows 期刊论文 Journal of crystal growth, 2004, 卷号: 260, 期号: 3-4, 页码: 388-393 作者:  Liu, JP;  Zhang, BS;  Wu, M;  Li, DB;  Zhang, JC 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Triple-axis x-ray diffraction  Atomic force microscopy  Metalorganic chemical vapor deposition  Alingan quaternary alloys   Abnormal energy dependence of photoluminescence decay time in InGaN epilayer 期刊论文 chinese physics letters, 2004, 卷号: 21, 期号: 12, 页码: 2529-2532 Huang, JS; Luo, XD; Yang, XD; Sun, Z; Sun, BQ; Xu, ZY; Ge, WK 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/17 MULTIPLE-QUANTUM WELLS   Depth dependence of the tetragonal distortion of a gan layer on si(111) studied by rutherford backscattering/channeling 期刊论文 Applied physics letters, 2002, 卷号: 80, 期号: 22, 页码: 4130-4132 作者:  Wu, MF;  Chen, CC;  Zhu, DZ;  Zhou, SQ;  Vantomme, A 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling 期刊论文 applied physics letters, 2002, 卷号: 80, 期号: 22, 页码: 4130-4132 Wu MF; Chen CC; Zhu DZ; Zhou SQ; Vantomme A; Langouche G; Zhang BS; Yang H 收藏  |  浏览/下载：65/0  |  提交时间：2010/08/12 X-RAY-DIFFRACTION  ELASTIC STRAIN  INGAN