Effect of  the thickness of InGaN interlayer on the a-plane GaN epilayer

	Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer
	Jian-Xia Wang ; Lian-Shan Wang ; Qian Zhang ; Xiang-Yue Meng ; Shao-Yan Yang ; Gui-Juan Zhao ; Hui-Jie Li ; Hong-Yuan Wei ; Zhan-Guo Wang
刊名	chinese physics b
	2015
卷号	24 期号:2 页码:26802-26806
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26865]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jian-Xia Wang,Lian-Shan Wang,Qian Zhang,et al. Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer[J]. chinese physics b,2015,24(2):26802-26806.
APA	Jian-Xia Wang.,Lian-Shan Wang.,Qian Zhang.,Xiang-Yue Meng.,Shao-Yan Yang.,...&Zhan-Guo Wang.(2015).Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer.chinese physics b,24(2),26802-26806.
MLA	Jian-Xia Wang,et al."Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer".chinese physics b 24.2(2015):26802-26806.