High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
	Zhang, Y ; Yan, FW ; Gao, HY ; Li, JM ; Zeng, YP ; Wang, GH ; Yang, FH
	2008
会议名称	conference on solid state lighting and solar energy technologies
会议日期	nov 12-14, 2007
会议地点	beijing, peoples r china
关键词	GaN nitrides LED MOCVD patterned sapphire substrate wet etching
页码	6841: t8410-t8410
通讯作者	zhang, y, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china.
中文摘要	patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. in this article, a wet-etching method for sapphire substrate is developed. the effect of substrate surface topographies on the quality of the gan epilayers and corresponding device performance are investigated. the gan epilayers grown on the wet-patterned sapphire substrates by mocvd are characterized by means of scanning electrical microscopy (sem), atomic force microscopy (afm), high-resolution x-ray diffraction (hrxrd), and photoluminescence (pl) techniques. in comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mw@20ma is measured for the ingan/gan blue leds grown on the wet-patterned sapphire substrate.
英文摘要	patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. in this article, a wet-etching method for sapphire substrate is developed. the effect of substrate surface topographies on the quality of the gan epilayers and corresponding device performance are investigated. the gan epilayers grown on the wet-patterned sapphire substrates by mocvd are characterized by means of scanning electrical microscopy (sem), atomic force microscopy (afm), high-resolution x-ray diffraction (hrxrd), and photoluminescence (pl) techniques. in comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mw@20ma is measured for the ingan/gan blue leds grown on the wet-patterned sapphire substrate.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t02:11:56z (gmt). no. of bitstreams: 1 696.pdf: 952085 bytes, checksum: a2225e70004d133ec0b6081adc8516d9 (md5) previous issue date: 2008; spie.; chinese opt soc.; [zhang, yang; yan, fawang; gao, haiyong; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; chinese opt soc.
会议录	solid state lighting and solar energy technologies
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	978-0-8194-7016-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/7832]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, Y,Yan, FW,Gao, HY,et al. High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T[C]. 见:conference on solid state lighting and solar energy technologies. beijing, peoples r china. nov 12-14, 2007.