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CORC

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Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/24
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
收藏  |  浏览/下载：3/0  |  提交时间：2021/07/06
Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 5
作者:  Tian, Zhi-Feng;  Xu, Peng;  Yu, Yao;  Sun, Jian-Dong;  Feng, Wei
收藏  |  浏览/下载：55/0  |  提交时间：2019/12/26
GaNFET as energy store for fast laser pulser 专利
专利号: US10256605, 申请日期: 2019-04-09, 公开日期: 2019-04-09
作者:  GASSEND, BLAISE;  DROZ, PIERRE-YVES
收藏  |  浏览/下载：27/0  |  提交时间：2019/12/23
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure 期刊论文
ELECTRONICS, 2019, 卷号: 8
作者:  Huang, Huolin;  Li, Feiyu;  Sun, Zhonghao;  Sun, Nan;  Zhang, Feng
收藏  |  浏览/下载：26/0  |  提交时间：2019/12/02
Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor 期刊论文
MATERIALS, 2019, 卷号: 12
作者:  Fu, Yafei;  Sun, Jie;  Du, Zaifa;  Guo, Weiling;  Yan, Chunli
收藏  |  浏览/下载：14/0  |  提交时间：2019/11/21
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor 期刊论文
Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 027301
作者:  Sheng-Lei Zhao;  Zhi-Zhe Wang;  Da-Zheng Chen;  Mao-Jun Wang;  Yang Dai
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer. 期刊论文
Applied Physics Letters, 2019, 卷号: Vol.114 No.1
作者:  Zhang, Sheng;  Wei, Ke;  Ma, Xiao-Hua;  Hou, Bin;  Liu, Guo-Guo
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/17
Study of electronic transport properties in AlGaN/AlN/GaN/AlGaN double-heterojunction transistor 期刊论文
2019, 卷号: 126
作者:  Li, Yao;  Zhang, Jinfeng
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/20

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