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	GaNFET as energy store for fast laser pulser
	GASSEND, BLAISE; DROZ, PIERRE-YVES
	2019-04-09
著作权人	WAYMO LLC
专利号	US10256605
国家	美国
文献子类	授权发明
其他题名	GaNFET as energy store for fast laser pulser
英文摘要	The present disclosure relates to systems and circuits that may facilitate sub-5 nanosecond laser diode operation. An example system includes a trigger source, a laser diode, a first field effect transistor and a second field effect transistor. The laser diode is coupled to a supply voltage and a drain terminal of the first field effect transistor. A source terminal of the first field effect transistor is coupled to ground and a gate terminal of the first field effect transistor is coupled to the trigger source. A drain terminal of the second field effect transistor is coupled to the supply voltage. A source terminal of the second field effect transistor and a gate terminal of the second field effect transistor are coupled to ground. In an example embodiment, the first field effect transistor and the second field effect transistor comprise gallium nitride (GaN).
公开日期	2019-04-09
申请日期	2017-11-29
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/32363]
专题	半导体激光器专利数据库
作者单位	WAYMO LLC
推荐引用方式 GB/T 7714	GASSEND, BLAISE,DROZ, PIERRE-YVES. GaNFET as energy store for fast laser pulser. US10256605. 2019-04-09.

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